New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31P Ions

New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single... A step-and-repeat and a simultaneous method are proposed and evaluated for the implantation of single highly charged 31P ions into a Si/Si x Ge1 – x heterostructure with the aim of creating the qubits of a solid-state quantum computer. The capabilities of existing axially symmetric compound electromagnetic objective lenses and ion sources are examined in this context. The advantages of such lenses over electrostatic ones are shown. An electromagnetic objective lens of exceptionally small axial aberrations is designed. An optical system using the lens is proposed for a step-and-repeat implanter. The parameters of the implanter are identified that determine its performance. They are lateral ion-positioning tolerance, the chromatic-aberration coefficient of the objective lens, source brightness, and ion multiplicity. An equation is derived that relates the parameters. Requirements are stated on the ion source. Possible ways are discussed of improving the performance of the ion source and the ion-optical system. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31P Ions

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1027393911066
Publisher site
See Article on Publisher Site

Abstract

A step-and-repeat and a simultaneous method are proposed and evaluated for the implantation of single highly charged 31P ions into a Si/Si x Ge1 – x heterostructure with the aim of creating the qubits of a solid-state quantum computer. The capabilities of existing axially symmetric compound electromagnetic objective lenses and ion sources are examined in this context. The advantages of such lenses over electrostatic ones are shown. An electromagnetic objective lens of exceptionally small axial aberrations is designed. An optical system using the lens is proposed for a step-and-repeat implanter. The parameters of the implanter are identified that determine its performance. They are lateral ion-positioning tolerance, the chromatic-aberration coefficient of the objective lens, source brightness, and ion multiplicity. An equation is derived that relates the parameters. Requirements are stated on the ion source. Possible ways are discussed of improving the performance of the ion source and the ion-optical system.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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