A step-and-repeat and a simultaneous method are proposed and evaluated for the implantation of single highly charged 31P ions into a Si/Si x Ge1 – x heterostructure with the aim of creating the qubits of a solid-state quantum computer. The capabilities of existing axially symmetric compound electromagnetic objective lenses and ion sources are examined in this context. The advantages of such lenses over electrostatic ones are shown. An electromagnetic objective lens of exceptionally small axial aberrations is designed. An optical system using the lens is proposed for a step-and-repeat implanter. The parameters of the implanter are identified that determine its performance. They are lateral ion-positioning tolerance, the chromatic-aberration coefficient of the objective lens, source brightness, and ion multiplicity. An equation is derived that relates the parameters. Requirements are stated on the ion source. Possible ways are discussed of improving the performance of the ion source and the ion-optical system.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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