A new manufacturing technology for power microwave silicon npn transistors is evaluated by 2D computer simulation in Silvaco’s SSUPREM4. It enables one to increase the effective emitter area, which makes for better power-handling and frequency capabilities, radiation hardness, and common-emitter output characteristics. Advantages of the new technology over the standard one are demonstrated.
Russian Microelectronics – Springer Journals
Published: Nov 16, 2007
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