Negative Differential Conductance of a Quasi-Ballistic MESFET

Negative Differential Conductance of a Quasi-Ballistic MESFET A quasi-ballistic GaAs MESFET with a V-groove gate of effective length 30 nm is studied theoretically and experimentally. The aim is to understand the causes of negative differential conductance in the device. It is established that the phenomenon stems from nonequilibrium transport effects and not the feedback via the gate–drain spurious capacitance. It is shown that increasing the drain voltage eventually eliminates negative differential conductance, which is due to the formation of a steady-state Gunn domain. Microwave generation is observed at 37 GHz with an output power of 160 μW and a bandwidth of 20–30 MHz. The ultimate oscillation frequency is theoretically estimated at 220 GHz. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Negative Differential Conductance of a Quasi-Ballistic MESFET

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1012537431378
Publisher site
See Article on Publisher Site

Abstract

A quasi-ballistic GaAs MESFET with a V-groove gate of effective length 30 nm is studied theoretically and experimentally. The aim is to understand the causes of negative differential conductance in the device. It is established that the phenomenon stems from nonequilibrium transport effects and not the feedback via the gate–drain spurious capacitance. It is shown that increasing the drain voltage eventually eliminates negative differential conductance, which is due to the formation of a steady-state Gunn domain. Microwave generation is observed at 37 GHz with an output power of 160 μW and a bandwidth of 20–30 MHz. The ultimate oscillation frequency is theoretically estimated at 220 GHz.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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