A quasi-ballistic GaAs MESFET with a V-groove gate of effective length 30 nm is studied theoretically and experimentally. The aim is to understand the causes of negative differential conductance in the device. It is established that the phenomenon stems from nonequilibrium transport effects and not the feedback via the gate–drain spurious capacitance. It is shown that increasing the drain voltage eventually eliminates negative differential conductance, which is due to the formation of a steady-state Gunn domain. Microwave generation is observed at 37 GHz with an output power of 160 μW and a bandwidth of 20–30 MHz. The ultimate oscillation frequency is theoretically estimated at 220 GHz.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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