Nanoscale Wear Layers on Silicon Wafers Induced by Mechanical Chemical Grinding

Nanoscale Wear Layers on Silicon Wafers Induced by Mechanical Chemical Grinding Two types of diamond wheel with a mesh size of 20,000 are developed. A novel approach for mechanical chemical grinding (MCG) is proposed using the diamond wheels developed. A wear layer of 56 nm in thickness is obtained on a silicon wafer, which is ground by the diamond wheel with ceria at a feed rate of 20 μm/min. It consists of an amorphous layer at the top and a damage crystalline layer beneath. The thickness of the wear layer is less than one third those ground using a conventional diamond wheel with a mesh size of 3000. Surface roughness R a and peak-to-valley values keep basically constant at 1 and 9.8 nm, respectively, with increasing feed rates from 5 to 20 μm/min, which is ground by the diamond wheel with ceria. Nanoscale wear layers are obtained on Si wafers ground by MCG in high efficiency, which is different from the traditional diamond grinding with thick wear layers and chemical mechanical grinding with low efficiency. The ground Si wafers are bright and absent of cracks. MCG paves the way for the applications in semiconductor and electronics industries. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Tribology Letters Springer Journals

Nanoscale Wear Layers on Silicon Wafers Induced by Mechanical Chemical Grinding

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Materials Science; Tribology, Corrosion and Coatings; Surfaces and Interfaces, Thin Films; Theoretical and Applied Mechanics; Physical Chemistry; Nanotechnology
ISSN
1023-8883
eISSN
1573-2711
D.O.I.
10.1007/s11249-017-0911-z
Publisher site
See Article on Publisher Site

Abstract

Two types of diamond wheel with a mesh size of 20,000 are developed. A novel approach for mechanical chemical grinding (MCG) is proposed using the diamond wheels developed. A wear layer of 56 nm in thickness is obtained on a silicon wafer, which is ground by the diamond wheel with ceria at a feed rate of 20 μm/min. It consists of an amorphous layer at the top and a damage crystalline layer beneath. The thickness of the wear layer is less than one third those ground using a conventional diamond wheel with a mesh size of 3000. Surface roughness R a and peak-to-valley values keep basically constant at 1 and 9.8 nm, respectively, with increasing feed rates from 5 to 20 μm/min, which is ground by the diamond wheel with ceria. Nanoscale wear layers are obtained on Si wafers ground by MCG in high efficiency, which is different from the traditional diamond grinding with thick wear layers and chemical mechanical grinding with low efficiency. The ground Si wafers are bright and absent of cracks. MCG paves the way for the applications in semiconductor and electronics industries.

Journal

Tribology LettersSpringer Journals

Published: Sep 2, 2017

References

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