Process of isotropic plasma etching of polysilicon to form nanostructures has been developed and optimized. Dependences of the technological characteristics of the isotropic plasma etching process of polysilicon on its operational parameters have been obtained. The results were to form nanowire silicon field effect transistors and a sensitive vibro-resonant nanoelement for an atom mass sensor.
Russian Microelectronics – Springer Journals
Published: Dec 4, 2011
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