1063-7397/03/3202- $25.00 © 2003 MAIK “Nauka /Interperiodica”
Russian Microelectronics, Vol. 32, No. 2, 2003, pp. 97–104. Translated from Mikroelektronika, Vol. 32, No. 2, 2003, pp. 124–133.
Original Russian Text Copyright © 2003 by Abramov, Goncharenko, Ignatenko, Korolev, Novik, Rogachev.
Researchers in information technologies show an
increasing interest in quantum integrated circuits based
on nanometer-scale devices and structures. Due to the
complexity of physical processes involved, much effort
has been invested into modeling and simulation.
Existing software packages mostly deal with a sin-
gle class of nanoelectronic devices. For example,
devices utilizing single-electron tunneling (SET) can
be examined with Monte Carlo Single Electron Simu-
lator (MOSES)  and SIMON . The model
employed is an equivalent circuit including capacitors,
tunnel junctions, and voltage sources. Regrettably, nei-
ther of the two packages can help one ascertain how
device characteristics depend on the structural and
In 1993 four US universities and the Texas Instru-
ments company (now Raytheon Systems) started devel-
oping a software system known as Nanoelectronic
Modeling (NEMO) [3, 4]. At present this project is
being pursued at the California Institute of Technology.
NEMO can be classiﬁed as general-purpose software
for quantum-device simulation . It covers resonant-
tunneling diodes (RTDs), selectively doped heterojunc-
tion transistors, heterojunction bipolar transistors,
superlattices, tunnel diodes, and tunnel metal–oxide–
semiconductor structures. Such a wide scope distin-
guishes NEMO from the other simulation software sys-
tems for nanoelectronics.
On the other hand, using nonequilibrium Green’s
functions, NEMO is too resource-intensive to be suit-
able for engineers, even when applied to RTDs .
Moreover, the model employed is essentially one-
dimensional (1D). Although 1D treatment is workable
with many nanoelectronic devices, it manifestly over-
simpliﬁes the physics of SET devices .
This paper outlines another software system, called
Nanoelectronic-Device Simulator (NANODEV),
which was ﬁrst reported at the CriMiCo’96 conference
. It has been developed since 1995 at the Physics of
Micro- and Nanoelectronic Devices Laboratory of the
Belarussian State University of Informatics and Radio-
electronics (BSUIR). The software is designed to char-
acterize devices that exploit SET, resonant tunneling, or
quantum interference. Below we describe the three
respective subsystems of NANODEV and illustrate its
NANODEV CONCEPT AND STRUCTURE
NANODEV was created with research, engineering,
and educational purposes in mind. In fact, it has proven
to be helpful for students majoring in Microelectronics
at BSUIR. Since each of well-known quantum-
mechanical formalisms has its merits and demerits ,
none of them is preferred in NANODEV. The system
consists of three subsystems: SET-NANODEV,
RTS-NANODEV, and QW-NANODEV. They deal
with SET devices, resonant-tunneling structures
(RTS’s), and quantum-wire (QW) devices, respec-
tively. Each subsystem is constructed by modularity
principle and implements a hierarchy of mathematical
models that may use different quantum-mechanical
formalisms. A block diagram of NANODEV is shown
in Fig. 1.
The SET-NANODEV subsystem is designed for the
simulation of three types of SET structure: the single-
electron box (SEB), the SET transistor, and the multi-
junction structure . Its block diagram is displayed
in Fig. 2. Since the devices differ in both function and
tunnel-junction count, a variety of mathematical mod-
els is employed, the major one being the semiclassical
The SEB unit calculates the total number of excess
charge carriers on the island, the equilibrium electro-
NANODEV: A Nanoelectronic-Device Simulation Software System
I. I. Abramov, I. A. Goncharenko, S. A. Ignatenko, A. V. Korolev,
E. G. Novik, and A. I. Rogachev
Belarussian State University of Informatics and Radioelectronics, Minsk, Belarus
Received January 31, 2002
—The concept and structure of the NANODEV simulation software are described. NANODEV deals
with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference.
It can use both simpliﬁed and sophisticated models and enables one to evaluate a wide variety of devices and
conﬁgurations. The capabilities of NANODEV are illustrated by examples.