n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping... Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses. Conditions are identified under which electron mobility can be enhanced by introduction of an ultrathin barrier into a single quantum well. The findings are analyzed from the viewpoint of interface structural quality. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

n-AlGaAs/GaAs/n-AlGaAs double quantum wells with an AlAs barrier: Relating the cladding doping level to structural and transport properties

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0010-y
Publisher site
See Article on Publisher Site

Abstract

Double quantum wells in the form of an AlGaAs/GaAs/AlGaAs heterostructure with an AlAs barrier a few monolayers thick are fabricated by MBE. Their structural and compositional characterization is carried out by double-crystal XRD and SIMS. Electron mobility is evaluated by Hall-effect measurements for different quantum-well thicknesses. Conditions are identified under which electron mobility can be enhanced by introduction of an ultrathin barrier into a single quantum well. The findings are analyzed from the viewpoint of interface structural quality.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 21, 2005

References

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