For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices.
Russian Microelectronics – Springer Journals
Published: Jan 23, 2016
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud