Monte Carlo Simulation of Nanoscale SOI MOSFETs

Monte Carlo Simulation of Nanoscale SOI MOSFETs A comparative review is presented of the current research on the quantum-mechanical and classical Monte Carlo simulation of SOI MOSFETs. A quantum-mechanical simulation method is proposed whereby the energy of transverse channel quantization is represented by a correction term. A newly developed simulation program, called BALSOI, is outlined. A comparison is made between the results of a 2D classical Monte Carlo simulation and those obtained by the quantum-mechanical method. It is observed that the differences are much smaller than what one might expect. This finding is explained as due to the considerable effect of the space charge, which is mainly governed by the classical, longitudinal motion of carriers through the channel. An analytical formula is derived for the effect of channel quantization on the gate–channel capacitance. The strength of tunneling current through a short-channel transistor in the off state is considered. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Monte Carlo Simulation of Nanoscale SOI MOSFETs

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000033824.00127.7b
Publisher site
See Article on Publisher Site

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