Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in native silicon oxide under irradiation

Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in... The penetration of hypersonic waves generated in native silicon oxide under the action of an alternating electric field in the case of the illumination or ion irradiation of silicon is simulated by molecular dynamics. It is found that compression leads to an increase in the velocity of the hypersonic wave and that the attenuation of the wave in the compression region of the edge dislocation is slower than in unstrained silicon. These results are consistent with previous analytical estimates made for explanation of the long-range effect. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Springer Journals

Molecular dynamics simulation of the penetration of silicon by hypersonic waves generated in native silicon oxide under irradiation

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Pleiades Publishing, Ltd.
Subject
Materials Science; Surfaces and Interfaces, Thin Films
ISSN
1027-4510
eISSN
1819-7094
D.O.I.
10.1134/S1027451017040127
Publisher site
See Article on Publisher Site

Abstract

The penetration of hypersonic waves generated in native silicon oxide under the action of an alternating electric field in the case of the illumination or ion irradiation of silicon is simulated by molecular dynamics. It is found that compression leads to an increase in the velocity of the hypersonic wave and that the attenuation of the wave in the compression region of the edge dislocation is slower than in unstrained silicon. These results are consistent with previous analytical estimates made for explanation of the long-range effect.

Journal

Journal of Surface Investigation. X-ray, Synchrotron and Neutron TechniquesSpringer Journals

Published: Aug 24, 2017

References

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