Modulation of oxygen in NiO:Cu films toward a physical insight of NiO:Cu/c-Si heterojunction solar cells

Modulation of oxygen in NiO:Cu films toward a physical insight of NiO:Cu/c-Si heterojunction... p-type Cu-doped NiO (NiO:Cu) thin films, a transition metal oxide as hole transport layer material, were fabricated using sputtering technology at a high substrate temperature. It is found that cooling oxygen pressures (Pco2), with the range of 10−4–2 × 104 Pa, modulating oxygen vacancies in the films, have an important impact on the property of NiO:Cu films through Ni and Cu oxidization level. The NiO:Cu film with a proper cooling oxygen pressure, 103 Pa in this work, reveals high hole concentration and transmittance, leading to a relatively high photovoltaic performance in the NiO:Cu/c-Si heterojunction solar cell. The lack of oxygen, e.g., cooled at oxygen pressure of 10−4 Pa, reduces Ni3+/Ni2+ and Cu1+/Cu2+ ratio in films, leading to the low hole concentration. The hole concentration is found to be related to open circuit voltage (V oc) and fill factor (FF) in NiO:Cu heterojunction solar cell devices. But the excess of oxygen, e.g., cooled at oxygen pressure of 104 Pa, slightly increases Ni2+ and Cu2+ content, which is not helpful to the good device performance. The optical band gap of the NiO:Cu film increases with increase in Pco2. The external quantum efficiencies of the devices are found to be fully consistent with the variation trend of optical properties of NiO:Cu films, which explained the change in short-circuit current (J sc) of the NiO:Cu/Si heterojunction solar cells. Therefore, this work enlightens a detailed understanding the effect of oxygen on NiO:Cu film photoelectrical properties and provides novel strategies for optimizing NiO:Cu/c-Si heterojunction solar cell performances. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science Springer Journals

Modulation of oxygen in NiO:Cu films toward a physical insight of NiO:Cu/c-Si heterojunction solar cells

Loading next page...
 
/lp/springer_journal/modulation-of-oxygen-in-nio-cu-films-toward-a-physical-insight-of-nio-EDrceyXLgO
Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics
ISSN
0022-2461
eISSN
1573-4803
D.O.I.
10.1007/s10853-018-2430-1
Publisher site
See Article on Publisher Site

Abstract

p-type Cu-doped NiO (NiO:Cu) thin films, a transition metal oxide as hole transport layer material, were fabricated using sputtering technology at a high substrate temperature. It is found that cooling oxygen pressures (Pco2), with the range of 10−4–2 × 104 Pa, modulating oxygen vacancies in the films, have an important impact on the property of NiO:Cu films through Ni and Cu oxidization level. The NiO:Cu film with a proper cooling oxygen pressure, 103 Pa in this work, reveals high hole concentration and transmittance, leading to a relatively high photovoltaic performance in the NiO:Cu/c-Si heterojunction solar cell. The lack of oxygen, e.g., cooled at oxygen pressure of 10−4 Pa, reduces Ni3+/Ni2+ and Cu1+/Cu2+ ratio in films, leading to the low hole concentration. The hole concentration is found to be related to open circuit voltage (V oc) and fill factor (FF) in NiO:Cu heterojunction solar cell devices. But the excess of oxygen, e.g., cooled at oxygen pressure of 104 Pa, slightly increases Ni2+ and Cu2+ content, which is not helpful to the good device performance. The optical band gap of the NiO:Cu film increases with increase in Pco2. The external quantum efficiencies of the devices are found to be fully consistent with the variation trend of optical properties of NiO:Cu films, which explained the change in short-circuit current (J sc) of the NiO:Cu/Si heterojunction solar cells. Therefore, this work enlightens a detailed understanding the effect of oxygen on NiO:Cu film photoelectrical properties and provides novel strategies for optimizing NiO:Cu/c-Si heterojunction solar cell performances.

Journal

Journal of Materials ScienceSpringer Journals

Published: May 17, 2018

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off