Modification of the positive photoresist surface by ion implantation

Modification of the positive photoresist surface by ion implantation It is experimentally shown by atomic-force microscopy methods that cone-shaped structures that are nonuniformly distributed over the surface are formed on the FP2190 positive photoresist surface in the process of ion implantation. The height, the base diameter, and the distribution density of these structures depend on the irradiation conditions and type of implanted ions. The morphological changes of the photoresist surface, observed during the implantation, are specified by the relaxation of the stresses formed in the manufacturing process of the polymer film and radiochemical processes in the near-surface layer of the photoresist. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Modification of the positive photoresist surface by ion implantation

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715060025
Publisher site
See Article on Publisher Site

Abstract

It is experimentally shown by atomic-force microscopy methods that cone-shaped structures that are nonuniformly distributed over the surface are formed on the FP2190 positive photoresist surface in the process of ion implantation. The height, the base diameter, and the distribution density of these structures depend on the irradiation conditions and type of implanted ions. The morphological changes of the photoresist surface, observed during the implantation, are specified by the relaxation of the stresses formed in the manufacturing process of the polymer film and radiochemical processes in the near-surface layer of the photoresist.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 4, 2015

References

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