Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2

Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2 The dry etching of trenches in SiO2 by high-voltage gas discharge is studied theoretically and experimentally. General relations between etch rate and process parameters are established. The formalism is confirmed by experiment with a CF4 plasma. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Modeling the High-Voltage Gas-Discharge-Plasma Etching of SiO2

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020981825473
Publisher site
See Article on Publisher Site

Abstract

The dry etching of trenches in SiO2 by high-voltage gas discharge is studied theoretically and experimentally. General relations between etch rate and process parameters are established. The formalism is confirmed by experiment with a CF4 plasma.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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