Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the charge sharing effect under exposure to single nuclear particles

Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the... The fault tolerance of CMOS D and RS flip-flops with a two-phase structure and memory cells based on them under exposure to single nuclear particles depends on the response to charge collection by several nodes. The relation between pairs of nodes with identical critical characteristics and specifics of symmetry of electric couplings between trigger transistors was established for DICE and Quatro cells. Critical pairs of nodes with minimal critical charges and an increased noise immunity were determined. The guidelines for mutual arrangement of transistors in DICE cells were given. The examples of quantitative estimation of critical dependences were given for cells with a 65 nm bulk CMOS design rule. DICE cells have an advantage in the event of multiple influence on the nodes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Modeling the characteristics of trigger elements of two-phase CMOS logic, taking into account the charge sharing effect under exposure to single nuclear particles

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714020061
Publisher site
See Article on Publisher Site

Abstract

The fault tolerance of CMOS D and RS flip-flops with a two-phase structure and memory cells based on them under exposure to single nuclear particles depends on the response to charge collection by several nodes. The relation between pairs of nodes with identical critical characteristics and specifics of symmetry of electric couplings between trigger transistors was established for DICE and Quatro cells. Critical pairs of nodes with minimal critical charges and an increased noise immunity were determined. The guidelines for mutual arrangement of transistors in DICE cells were given. The examples of quantitative estimation of critical dependences were given for cells with a 65 nm bulk CMOS design rule. DICE cells have an advantage in the event of multiple influence on the nodes.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 26, 2014

References

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