A method to calculate the yield of the primary recombination of electrons and holes in SiO2 is suggested. The boundedness of the approach for the description of the transfer and recombination in SiO2 based on the solution of the Smoluchowski equation and capture model not taking into account the structure of deep levels of the center is shown. The experimental and theoretical values of the recombination yield agree in a wide range of values of the field strength.
Russian Microelectronics – Springer Journals
Published: May 22, 2011
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