Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits

Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI... A theoretical analysis and a numerical simulation are reported of physical processes in the field oxide of CMOS circuits exposed to an ionizing-radiation pulse of high dose rate. Account is taken of (i) the field of radiation-generated charge carriers, (ii) the random distribution of the local field due to randomly scattered charges in the oxide, and (iii) geminate and bimolecular recombination. For weak and medium static applied fields, the dispersive transport of free holes is analyzed by the fractional Fokker–Planck equation, and a Monte Carlo simulation is conducted with regard to the oxide-charge field and the field dependence of hop times. The response of SOI oxide containing electron traps is considered. A method is proposed for the physical simulation of field-oxide radiation response at high dose rates. It consists in replacing pulsed irradiation at room temperature with steady-state irradiation at a low temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits

Loading next page...
 
/lp/springer_journal/modeling-of-high-dose-rate-pulsed-radiation-effects-in-the-parasitic-jiqmVL65nu
Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000018712.14204.e0
Publisher site
See Article on Publisher Site

Abstract

A theoretical analysis and a numerical simulation are reported of physical processes in the field oxide of CMOS circuits exposed to an ionizing-radiation pulse of high dose rate. Account is taken of (i) the field of radiation-generated charge carriers, (ii) the random distribution of the local field due to randomly scattered charges in the oxide, and (iii) geminate and bimolecular recombination. For weak and medium static applied fields, the dispersive transport of free holes is analyzed by the fractional Fokker–Planck equation, and a Monte Carlo simulation is conducted with regard to the oxide-charge field and the field dependence of hop times. The response of SOI oxide containing electron traps is considered. A method is proposed for the physical simulation of field-oxide radiation response at high dose rates. It consists in replacing pulsed irradiation at room temperature with steady-state irradiation at a low temperature.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off