A theoretical analysis and a numerical simulation are reported of physical processes in the field oxide of CMOS circuits exposed to an ionizing-radiation pulse of high dose rate. Account is taken of (i) the field of radiation-generated charge carriers, (ii) the random distribution of the local field due to randomly scattered charges in the oxide, and (iii) geminate and bimolecular recombination. For weak and medium static applied fields, the dispersive transport of free holes is analyzed by the fractional Fokker–Planck equation, and a Monte Carlo simulation is conducted with regard to the oxide-charge field and the field dependence of hop times. The response of SOI oxide containing electron traps is considered. A method is proposed for the physical simulation of field-oxide radiation response at high dose rates. It consists in replacing pulsed irradiation at room temperature with steady-state irradiation at a low temperature.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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