# Modeling of graphene-based field-effect transistors through a 1-D real-space approach

Modeling of graphene-based field-effect transistors through a 1-D real-space approach In this work, we present a computationally efficient approach for atomistic simulations of graphene nanoribbon (GNR), bilayer graphene (BLG) and bilayer graphene nanoribbon (BLGNR) field-effect transistors. The simulation scheme, which involves the self-consistent solutions of the non-equilibrium Green function method (NEGF) and 2-D Poisson’s equation, is based on the tight binding Hamiltonian in a 1-D real-space basis. We show that the Hamiltonian matrix for smooth edge GNRs and graphene can be expressed by 1  $$\times$$ ×  1 size coupling matrices, which provides easy solutions for NEGF equations and largely reduces the computational time for simulation. The BLG and BLGNR can be described by the two coupled single-layer GNR Hamiltonian matrices, which allows the modeling of these devices by the same transport equations as GNR-FET with small modifications. Furthermore, the developed transport models are verified with the previously reported simulation and theoretical results. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Computational Electronics Springer Journals

# Modeling of graphene-based field-effect transistors through a 1-D real-space approach

, Volume 17 (1) – Oct 3, 2017
11 pages

/lp/springer_journal/modeling-of-graphene-based-field-effect-transistors-through-a-1-d-real-QXjTEcMNu2
Publisher
Springer US
Subject
Engineering; Mathematical and Computational Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering
ISSN
1569-8025
eISSN
1572-8137
D.O.I.
10.1007/s10825-017-1069-5
Publisher site
See Article on Publisher Site

### Abstract

In this work, we present a computationally efficient approach for atomistic simulations of graphene nanoribbon (GNR), bilayer graphene (BLG) and bilayer graphene nanoribbon (BLGNR) field-effect transistors. The simulation scheme, which involves the self-consistent solutions of the non-equilibrium Green function method (NEGF) and 2-D Poisson’s equation, is based on the tight binding Hamiltonian in a 1-D real-space basis. We show that the Hamiltonian matrix for smooth edge GNRs and graphene can be expressed by 1  $$\times$$ ×  1 size coupling matrices, which provides easy solutions for NEGF equations and largely reduces the computational time for simulation. The BLG and BLGNR can be described by the two coupled single-layer GNR Hamiltonian matrices, which allows the modeling of these devices by the same transport equations as GNR-FET with small modifications. Furthermore, the developed transport models are verified with the previously reported simulation and theoretical results.

### Journal

Journal of Computational ElectronicsSpringer Journals

Published: Oct 3, 2017

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