Modeling of deep grooving of silicon in the process of plasmochemical cyclic etching/passivation

Modeling of deep grooving of silicon in the process of plasmochemical cyclic etching/passivation A new hybrid 2.5-dimensional method of modeling deep grooving of Si in the process of cyclic two-stage etching/passivation in an SF6/C4F8 plasma is presented. The method is based on the Monte Carlo simulation of fluxes of plasma particles and the string-cell model of profile representation. The model of isotropic Si etching in the SF6 plasma, ion-stimulated etching, and polymeric film deposition in the C4F8 plasma is presented. The results of modeling of deep submicron-wide grooves with a high aspect ratio (A > 20) correlate well with the experimental data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Modeling of deep grooving of silicon in the process of plasmochemical cyclic etching/passivation

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2007 by Pleiades Publishing, Ltd.
Subject
Engineering; Electronic and Computer Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373970704004X
Publisher site
See Article on Publisher Site

Abstract

A new hybrid 2.5-dimensional method of modeling deep grooving of Si in the process of cyclic two-stage etching/passivation in an SF6/C4F8 plasma is presented. The method is based on the Monte Carlo simulation of fluxes of plasma particles and the string-cell model of profile representation. The model of isotropic Si etching in the SF6 plasma, ion-stimulated etching, and polymeric film deposition in the C4F8 plasma is presented. The results of modeling of deep submicron-wide grooves with a high aspect ratio (A > 20) correlate well with the experimental data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 24, 2007

References

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