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A. Mahorowala, H. Sawin (2002)
Etching of polysilicon in inductively coupled Cl2 and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kineticsJournal of Vacuum Science & Technology B, 20
Rodolfo Belen, S. Gomez, D. Cooperberg, M. Kiehlbauch, E. Aydil (2005)
Feature scale model of Si etching in SF6∕O2∕HBr plasma and comparison with experimentsJournal of Vacuum Science and Technology, 23
S. Takagi, K. Iyanagi, S. Onoue, T. Shinmura, M. Fujino (2002)
Topography Simulation of Reactive Ion Etching Combined with Plasma Simulation, Sheath Model, and Surface Reaction ModelJapanese Journal of Applied Physics, 41
I.I. Amirov, N.V. Alov (2006)
Deposition of the Fluorocarbon Polymeric Film in the Low-Temperature RF-Discharge C4F8+SF6 PlasmaKhim. Vys. Energ., 40
Weidong Jin, H. Sawin (2003)
Feature profile evolution in high-density plasma etching of silicon with Cl2Journal of Vacuum Science and Technology, 21
I. Rangelow (2003)
Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systemsJournal of Vacuum Science and Technology, 21
B. Volland, I. Rangelow (2003)
The influence of reactant transport on the profiles of gas chopping etching processes: a simulation approachMicroelectronic Engineering, 67
D. Graves, M. Kushner (2003)
Influence of modeling and simulation on the maturation of plasma technology: Feature evolution and reactor designJournal of Vacuum Science and Technology, 21
H. Ohta, S. Hamaguchi (2001)
Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beamsJournal of Vacuum Science and Technology, 19
R. Zhou, Haixia Zhang, Y. Hao, Yangyuan Wang (2004)
Simulation of the Bosch process with a string-cell hybrid methodJournal of Micromechanics and Microengineering, 14
G. Kokkoris, A. Tserepi, A. Boudouvis, E. Gogolides (2004)
Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolutionJournal of Vacuum Science and Technology, 22
S. Rauf, W. Dauksher, S. Clemens, Kenneth Smith (2002)
Model for a multiple-step deep Si etch processJournal of Vacuum Science and Technology, 20
M. Blauw, T. Zijlstra, E. Drift (2001)
Balancing the etching and passivation in time-multiplexed deep dry etching of siliconJournal of Vacuum Science & Technology B, 19
S. McAuley, H. Ashraf, Lilian Atabo, A. Chambers, S. Hall, J. Hopkins, G. Nicholls (2001)
Silicon micromachining using a high-density plasma sourceJournal of Physics D, 34
A. Sankaran, M. Kushner (2004)
Integrated feature scale modeling of plasma processing of porous and solid SiO2. I. Fluorocarbon etchingJournal of Vacuum Science and Technology, 22
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Challenges, developments and applications of silicon deep reactive ion etchingMicroelectronic Engineering, 67
H. Winters, J. Coburn (1992)
Surface Science Aspects of Etching ReactionsChemInform, 23
Y. Im, Y. Hahn, S. Pearton (2001)
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M. Blauw, G. Crăciun, W. Sloof, P. French, E. Drift (2002)
Advanced time-multiplexed plasma etching of high aspect ratio silicon structuresJournal of Vacuum Science & Technology B, 20
J. Coburn, H. Winters (1989)
Conductance considerations in the reactive ion etching of high aspect ratio featuresApplied Physics Letters, 55
A new hybrid 2.5-dimensional method of modeling deep grooving of Si in the process of cyclic two-stage etching/passivation in an SF6/C4F8 plasma is presented. The method is based on the Monte Carlo simulation of fluxes of plasma particles and the string-cell model of profile representation. The model of isotropic Si etching in the SF6 plasma, ion-stimulated etching, and polymeric film deposition in the C4F8 plasma is presented. The results of modeling of deep submicron-wide grooves with a high aspect ratio (A > 20) correlate well with the experimental data.
Russian Microelectronics – Springer Journals
Published: Jul 24, 2007
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