Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode

Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode Journal of ELECTRONIC MATERIALS https://doi.org/10.1007/s11664-018-6408-1 © 2018 The Minerals, Metals Materials Society Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode 1,2,3 1 ABDERREZZAQ ZIANE, MOHAMMED AMRANI, 1 1 ZINEB BENAMARA, and ABDELAZIZ RABEHI 1.—Laboratoire de Micro-e´lectronique Applique´e, De´partement d’e´lectronique, Universite´ Djillali Liabe`s de Sidi Bel Abbe`s, 22000 Sidi Bel Abbe`s, Algeria. 2.—Unite´ de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de De´veloppement des Energies Renouve- lables, CDER, 01000 Adrar, Algeria. 3.—e-mail: A.ziane@urerms.dz A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance–voltage (C– V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C–V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift– diffusion model based on the Scharfetter–Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Electronic Materials Springer Journals

Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode

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Publisher
Springer US
Copyright
Copyright © 2018 by The Minerals, Metals & Materials Society
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics
ISSN
0361-5235
eISSN
1543-186X
D.O.I.
10.1007/s11664-018-6408-1
Publisher site
See Article on Publisher Site

Abstract

Journal of ELECTRONIC MATERIALS https://doi.org/10.1007/s11664-018-6408-1 © 2018 The Minerals, Metals Materials Society Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode 1,2,3 1 ABDERREZZAQ ZIANE, MOHAMMED AMRANI, 1 1 ZINEB BENAMARA, and ABDELAZIZ RABEHI 1.—Laboratoire de Micro-e´lectronique Applique´e, De´partement d’e´lectronique, Universite´ Djillali Liabe`s de Sidi Bel Abbe`s, 22000 Sidi Bel Abbe`s, Algeria. 2.—Unite´ de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de De´veloppement des Energies Renouve- lables, CDER, 01000 Adrar, Algeria. 3.—e-mail: A.ziane@urerms.dz A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance–voltage (C– V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C–V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift– diffusion model based on the Scharfetter–Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations.

Journal

Journal of Electronic MaterialsSpringer Journals

Published: Jun 5, 2018

References

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