Model Analysis of Transients in On-Chip Interconnections

Model Analysis of Transients in On-Chip Interconnections Transient processes due to the inductive properties of interconnections are considered. The hierarchy of characteristic physical times is discussed at a qualitative level. From model solutions of the telegraph equations, a perturbation parameter is derived. It allows asymptotic representation in terms of the RLCand RCmodels of interconnections. Associated estimates for submicron technologies are given. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Model Analysis of Transients in On-Chip Interconnections

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Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011302612707
Publisher site
See Article on Publisher Site

Abstract

Transient processes due to the inductive properties of interconnections are considered. The hierarchy of characteristic physical times is discussed at a qualitative level. From model solutions of the telegraph equations, a perturbation parameter is derived. It allows asymptotic representation in terms of the RLCand RCmodels of interconnections. Associated estimates for submicron technologies are given.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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