Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors

Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors A two-stage optimization technique for the parameters of SOI-MOS structures is proposed based on the correction of the pocket formation modes of an active structure. As a result of the use of this technique, the threshold voltage of the bottom (parasitic) transistor doubles, while maintaining the values of the parameters of the upper (main) transistor. The experimental investigations confirmed the effectiveness of using this optimization technique when doping the pockets of a SOI-MOS structure to provide the radiation hardness to the accumulated dose. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Mode optimization of retrograde pocket doping in SOI-MOS VLSI transistors

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971604003X
Publisher site
See Article on Publisher Site

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