Mixing of Gaussian pulses by nonlinear periodic semiconductor structures

Mixing of Gaussian pulses by nonlinear periodic semiconductor structures The nonlinear scattering of two non-collinear Gaussian pulses with different central frequencies and lengths, incident on the periodic stacks of semiconductor layers, is analyzed in the self-consistent problem formulation, taking into account the dynamics of carriers. It is demonstrated that the waveform evolution in passive weakly nonlinear semiconductor periodic structure is strongly affected by the parameters of incident pulses. The obtained solutions have revealed the effect of stack spectral characteristics on the properties of the emitted waveforms of combinatorial frequencies. Significant increase of the amplitude of scattered waveform is observed as central frequencies of pump pulses are close to the plasma frequencies of semiconductor layers. It is remarkable that collision frequencies of the carriers in semiconductor materials strongly influence the mixing of incident pulses in the stacks. The enhanced amplitudes of the generated waveforms have been demonstrated numerically for the semiconductors with high collision frequencies. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Optical and Quantum Electronics Springer Journals

Mixing of Gaussian pulses by nonlinear periodic semiconductor structures

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Springer US
Copyright © 2017 by Springer Science+Business Media, LLC
Physics; Optics, Lasers, Photonics, Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks
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