Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass The generation rate of minority carriers at the interface between a silicon substrate and a layer of lead borosilicate glass is evaluated experimentally by the method of capacitance relaxation. It is shown that an increase in the fire-polishing temperature of the glass results in a higher generation rate, due to an increased density of surface states at the interface. The lifetime of minority carriers in the interface layer of the substrate is determined. Deep generation centers are discovered in the bulk of the substrate. They are defects caused by a rise in substrate temperature during the fabrication of the specimen. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1012589415448
Publisher site
See Article on Publisher Site

Abstract

The generation rate of minority carriers at the interface between a silicon substrate and a layer of lead borosilicate glass is evaluated experimentally by the method of capacitance relaxation. It is shown that an increase in the fire-polishing temperature of the glass results in a higher generation rate, due to an increased density of surface states at the interface. The lifetime of minority carriers in the interface layer of the substrate is determined. Deep generation centers are discovered in the bulk of the substrate. They are defects caused by a rise in substrate temperature during the fabrication of the specimen.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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