The generation rate of minority carriers at the interface between a silicon substrate and a layer of lead borosilicate glass is evaluated experimentally by the method of capacitance relaxation. It is shown that an increase in the fire-polishing temperature of the glass results in a higher generation rate, due to an increased density of surface states at the interface. The lifetime of minority carriers in the interface layer of the substrate is determined. Deep generation centers are discovered in the bulk of the substrate. They are defects caused by a rise in substrate temperature during the fabrication of the specimen.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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