A technology is developed for making single-chip diaphragm pressure sensors with polycrystalline-silicon piezoresistive elements on a monocrystalline-silicon substrate. It allows one to produce piezoresistive elements with a conductivity–temperature characteristic that neutralizes the temperature dependence of piezoresistive sensitivity. Sensors with a 1.8 × 1.8-mm2 diaphragm are designed and fabricated by the above technology for pressures ranging from 1 to 105 Pa, showing a maximum sensitivity of 10–6 Pa–1. The sensors are tested in aerodynamic experiments on monitoring the flow past a model wing of finite span at angles of attack close to the stall angle.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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