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H. Atwater (1960)
Microwave Measurement of Semiconductor Carrier LifetimesJournal of Applied Physics, 31
H. Jacobs, F. Brand, J. Meindl, S. Weitz, R. Benjamin, D. Holmes (1963)
New microwave techniques in surface recombination and lifetime studies, 51
S. Deb, B. Nag (1962)
Measurement of Lifetime of Carriers in Semiconductors through Microwave ReflectionJournal of Applied Physics, 33
M. Schöfthaler, R. Brendel (1995)
Sensitivity and transient response of microwave reflection measurementsJournal of Applied Physics, 77
A. Ramsa, H. Jacobs, F. Brand (1959)
Microwave Techniques in Measurement of Lifetime in GermaniumJournal of Applied Physics, 30
K. Misiakos, F. Lindholm, A. Neugroschel (1985)
Solution of the continuity equation in planar symmetry cases and assessment of photoluminescence decayJournal of Applied Physics, 58
M. Kunst, G. Beck (1986)
The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.Journal of Applied Physics, 63
K. Champlin, J. Bhar (1963)
Microwave techniques in the study of semiconductors, 51
A further investigation is conducted into a new microwave method for evaluating bulk lifetime in silicon ingots
Russian Microelectronics – Springer Journals
Published: Sep 27, 2005
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