For estimating the potential of an AlGaN/GaN HEMT, we simulate a model amplifier with this transistor in the time domain. The base of this simulation is the earlier proposed two-dimensional model of electron-hole plasma in HEMTs, which takes into account the effects of electron velocity overshoot and avalanche multiplication of charge carriers due to impact ionization. The matching elements of the amplifier are obtained by means of the intrinsic transistor large-signal equivalent circuit. Using the time domain simulations, we calculate the power-added efficiency and other amplifier parameters as functions of the maximum available power of the input RF generator at a frequency of 18 GHz. The maximum power-added efficiency of 35% is one of our results.
Journal of Computational Electronics – Springer Journals
Published: Sep 19, 2017
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