Metal oxide nanoparticles synthesized on porous silicon substrates

Metal oxide nanoparticles synthesized on porous silicon substrates Tin, iron, and nickel oxides are prepared from sols in micro porous silicon. The morphology of the samples is investigated by means of atomic force microscopy; the cross sections of porous silicon by means of scanning electron microscopy. The electrical properties are analyzed by impedance spectroscopy in a changing gas environment at a varying temperature of gas detection reagents. The dependences for the real and imaginary components of the complex impedance are constructed in semilogarithmic coordinates. the method in the complex plane is used for processing the experimental impedance data. The impedance hodographs are analyzed with the aid of programs written in the LabVIEW environment. the experimental data of impedance spectroscopy are interpreted in terms of an “equivalent electrical circuit.” The constant phase element is used to describe the resistive-capacitive properties of the nanocomposite materials in the equivalent electrical circuit. the characteristic charge accumulation time is calculated in the air environment and in the presence of reducing gases. The sensitivity to reducing gases is evaluated in two ways, for the real and imaginary components of the complex impedance, at a temperature of 300°C in the frequency range from 1 Hz to 500 kHz. The sensor characteristics of the metal oxide films, which are prepared on the substrates of single-crystal silicon, porous silicon, and glass, are compared. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Metal oxide nanoparticles synthesized on porous silicon substrates

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Publisher
Springer Journals
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715080089
Publisher site
See Article on Publisher Site

Abstract

Tin, iron, and nickel oxides are prepared from sols in micro porous silicon. The morphology of the samples is investigated by means of atomic force microscopy; the cross sections of porous silicon by means of scanning electron microscopy. The electrical properties are analyzed by impedance spectroscopy in a changing gas environment at a varying temperature of gas detection reagents. The dependences for the real and imaginary components of the complex impedance are constructed in semilogarithmic coordinates. the method in the complex plane is used for processing the experimental impedance data. The impedance hodographs are analyzed with the aid of programs written in the LabVIEW environment. the experimental data of impedance spectroscopy are interpreted in terms of an “equivalent electrical circuit.” The constant phase element is used to describe the resistive-capacitive properties of the nanocomposite materials in the equivalent electrical circuit. the characteristic charge accumulation time is calculated in the air environment and in the presence of reducing gases. The sensitivity to reducing gases is evaluated in two ways, for the real and imaginary components of the complex impedance, at a temperature of 300°C in the frequency range from 1 Hz to 500 kHz. The sensor characteristics of the metal oxide films, which are prepared on the substrates of single-crystal silicon, porous silicon, and glass, are compared.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 21, 2015

References

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