Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°C

Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten... The temperature dependences of the specific electroconductivity of silicon-carbon films with nanosized tungsten inclusions were studied. The electroconductivity of specimens within a temperature range of 20–200°C was measured by the contact method. The electroconductivity of films with a room-temperature specific electroconductivity of 0.03-15 Ω cm was shown to grow with increasing temperature and have two componentsthermoactivation and constant, presumably, of a tunnel character. The contribution of the tunnel component grew from 40 to 80% with an increase in the tungsten concentration in a film and a simultaneous decrease in the activation energy from 0.1 to 0.06 eV. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°C

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713080027
Publisher site
See Article on Publisher Site

Abstract

The temperature dependences of the specific electroconductivity of silicon-carbon films with nanosized tungsten inclusions were studied. The electroconductivity of specimens within a temperature range of 20–200°C was measured by the contact method. The electroconductivity of films with a room-temperature specific electroconductivity of 0.03-15 Ω cm was shown to grow with increasing temperature and have two componentsthermoactivation and constant, presumably, of a tunnel character. The contribution of the tunnel component grew from 40 to 80% with an increase in the tungsten concentration in a film and a simultaneous decrease in the activation energy from 0.1 to 0.06 eV.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2013

References

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