An experimental examination of a thin diaphragm for integrated piezoresistive pressure sensors is reported. The diaphragm is fabricated by ultradeep anisotropic chemical etching of monocrystalline silicon. The mechanism of the process is investigated by exploring the morphology of the etched surface. Process-induced pyramidal hillocks, pits, and trenches are measured.
Russian Microelectronics – Springer Journals
Published: Oct 11, 2004
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