1063-7397/03/3203- $25.00 © 2003 MAIK “Nauka /Interperiodica”
Russian Microelectronics, Vol. 32, No. 3, 2003, pp. 151–157. Translated from Mikroelektronika, Vol. 32, No. 3, 2003, pp. 194–201.
Original Russian Text Copyright © 2003 by Sokolov, Arkhipov, Shkol’nikov.
Mechanism of the Ultradeep Anisotropic Chemical Etching
of Si(100) in the Microfabrication
of Piezoresistive Pressure Sensors
L. V. Sokolov, S. V. Arkhipov, and V. M. Shkol’nikov
Moscow State Institute of Aviation, Moscow, Russia
Received August 18, 2002
—An experimental examination of a thin diaphragm for integrated piezoresistive pressure sensors is
reported. The diaphragm is fabricated by ultradeep anisotropic chemical etching of monocrystalline silicon. The
mechanism of the process is investigated by exploring the morphology of the etched surface. Process-induced
pyramidal hillocks, pits, and trenches are measured.
In Russia, interest has developed in intelligent
microelectromechanical systems (MEMS’s), as indi-
cated by the fact that this technology is covered by a
2000–2006 goal-oriented federal program for electron-
ics . MEMS’s are produced by planar technology
combined with silicon micropatterning, integrated
mechanical-input sensors being an example.
Sketches of (a) a cross section through the diaphragm and (b) the etching mask.