Measuring temperature of silicon monocrystals using spectral pyrometry

Measuring temperature of silicon monocrystals using spectral pyrometry Spectrums of the thermal radiation of silicon monocrystals that are heated by a continuous laser beam (wavelength of 1.064 μm) are recorded within the wavelength range λ = 200–2500 nm. Silicon temperatures are determined within the interval T = 900–1700 K using the spectral pyrometry. The processing of a sequence of spectrums recorded with the frequency 100–1000 Hz allows the evolution of the crystal temperature to be restored during laser heating in the case when heating rates are sufficiently small. Peculiarities of different spectral intervals are discussed as applied to the problem of measuring the silicon temperature. During the laser heating of silicon, the temperature of a surface layer is shown to be heterogeneous with respect to depth, which is manifested in differences between average values calculated using thermal radiation spectrums and the surface temperature. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Measuring temperature of silicon monocrystals using spectral pyrometry

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714010077
Publisher site
See Article on Publisher Site

Abstract

Spectrums of the thermal radiation of silicon monocrystals that are heated by a continuous laser beam (wavelength of 1.064 μm) are recorded within the wavelength range λ = 200–2500 nm. Silicon temperatures are determined within the interval T = 900–1700 K using the spectral pyrometry. The processing of a sequence of spectrums recorded with the frequency 100–1000 Hz allows the evolution of the crystal temperature to be restored during laser heating in the case when heating rates are sufficiently small. Peculiarities of different spectral intervals are discussed as applied to the problem of measuring the silicon temperature. During the laser heating of silicon, the temperature of a surface layer is shown to be heterogeneous with respect to depth, which is manifested in differences between average values calculated using thermal radiation spectrums and the surface temperature.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 11, 2014

References

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