Measurements of linear dimensions of silicon nanorelief elements with a near-rectangular profile by defocusing the electron probe of a scanning electron microscope

Measurements of linear dimensions of silicon nanorelief elements with a near-rectangular profile... Solitary silicon nanorelief elements with different widths are studied with the use of a scanning electron microscope (SEM). From the video signal curves obtained in the secondary-slow-electron mode of SEM measurements, the dependences of the length of check segments G p (D ef) and L p (D ef), where D ef is the effective diameters of the SEM probe, are determined. The dependences are found to be linear for all four solitary protrusions, and as D ef is increased, the length G p increases and the length L p decreases. It is shown that the method of defocusing the SEM electron probe provides a means for determining the linear dimension of nanorelief elements with a near-rectangular profile by extrapolating the linear dependences G p (D ef) and L p (D ef) to D ef = 0. It is established that the invariant check segment representative of the linear dimension of a particular relief element is at the level (sl)aver = 0.80 ± 0.03 for silicon elements with different widths. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Measurements of linear dimensions of silicon nanorelief elements with a near-rectangular profile by defocusing the electron probe of a scanning electron microscope

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Publisher
Springer Journals
Copyright
Copyright © 2010 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971006003X
Publisher site
See Article on Publisher Site

Abstract

Solitary silicon nanorelief elements with different widths are studied with the use of a scanning electron microscope (SEM). From the video signal curves obtained in the secondary-slow-electron mode of SEM measurements, the dependences of the length of check segments G p (D ef) and L p (D ef), where D ef is the effective diameters of the SEM probe, are determined. The dependences are found to be linear for all four solitary protrusions, and as D ef is increased, the length G p increases and the length L p decreases. It is shown that the method of defocusing the SEM electron probe provides a means for determining the linear dimension of nanorelief elements with a near-rectangular profile by extrapolating the linear dependences G p (D ef) and L p (D ef) to D ef = 0. It is established that the invariant check segment representative of the linear dimension of a particular relief element is at the level (sl)aver = 0.80 ± 0.03 for silicon elements with different widths.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 11, 2010

References

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