Multilayered nitride heterostructures AlN/AlGaN/GaN/AlGaN are grown using a Nanofab-100 multichamber domestic complex involving a STE3N3 specialized installation of molecular beam epitaxy. The obtained heterostructures have high structural quality, smooth morphology, and a low dislocation density, which demonstrates the high potential of the nanotechnological complex.
Russian Microelectronics – Springer Journals
Published: Nov 7, 2012
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