MBE-Grown GaAs Films on GaAs(111)A Substrates Misoriented toward [21¯1¯]

MBE-Grown GaAs Films on GaAs(111)A Substrates Misoriented toward [21¯1¯] An experimental investigation is carried out into the electrical properties of doped MBE-grown GaAs films on GaAs(111)A substrates that may be misoriented toward a given direction, with silicon being the only dopant. Single n- and p-type films and planar pn junctions are produced on perfectly oriented substrates, the junctions being tested as part of diodes. In addition, δ-Si doped GaAs multilayers are grown on substrates misoriented by 0.5°, 1.5°, or 3° toward [21¯1¯]. The sheet-resistivity anisotropy of the multilayers is revealed and measured. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

MBE-Grown GaAs Films on GaAs(111)A Substrates Misoriented toward [21¯1¯]

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1021805701909
Publisher site
See Article on Publisher Site

Abstract

An experimental investigation is carried out into the electrical properties of doped MBE-grown GaAs films on GaAs(111)A substrates that may be misoriented toward a given direction, with silicon being the only dopant. Single n- and p-type films and planar pn junctions are produced on perfectly oriented substrates, the junctions being tested as part of diodes. In addition, δ-Si doped GaAs multilayers are grown on substrates misoriented by 0.5°, 1.5°, or 3° toward [21¯1¯]. The sheet-resistivity anisotropy of the multilayers is revealed and measured.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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