The processes of formation of “shock waves” in a two-dimensional electron gas in the channel of a ballistic field-effect transistor are simulated numerically. The “shock waves” are generated due to the ac voltage applied to the gate of the transistor. The results of numerical simulation are used to analyze the structure of the “shock wave” front and the dependence of the structure on the dispersion and dissipation effects.
Russian Microelectronics – Springer Journals
Published: May 20, 2010
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