Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor

Mathematical simulation of the influence of the doping concentration on the drain current of an... The influence of the doping concentration in the active layer and in the bulk substrate on the drain current of a silicon-on-insulator (SOI) field-effect Hall sensor (FEHS) using Sentaurus TCAD is studied. At the initial stage, the numerical model is corrected by comparing the transfer current-voltage characteristics of the calculation and the experimentally measured SOI FEHS sample. It is shown that, under low concentrations in the active layer, the drain current depends on the capacity of the front gate, while the doping concentration in the bulk substrate affects the drain current only when the device is operating in depletion mode. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716070076
Publisher site
See Article on Publisher Site

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