ISSN 1063-7397, Russian Microelectronics, 2016, Vol. 45, No. 7, pp. 447–450. © Pleiades Publishing, Ltd., 2016.
Original Russian Text © A.V. Kozlov, M.A. Korolev, S.S. Petrunina, 2015, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2015, Vol. 20, No. 4, pp. 377–381.
Mathematical Simulation of the Influence
of the Doping Concentration on the Drain Current
of an SOI Field-Effect Hall Sensor
A. V. Kozlov*, M. A. Korolev, and S. S. Petrunina
National Research University of Electronic Technology, Moscow, 124498 Russia
Received April 13, 2015
Abstract—The influence of the doping concentration in the active layer and in the bulk substrate on the drain
current of a silicon-on-insulator (SOI) field-effect Hall sensor (FEHS) using Sentaurus TCAD is studied. At
the initial stage, the numerical model is corrected by comparing the transfer current-voltage characteristics
of the calculation and the experimentally measured SOI FEHS sample. It is shown that, under low concen-
trations in the active layer, the drain current depends on the capacity of the front gate, while the doping con-
centration in the bulk substrate affects the drain current only when the device is operating in depletion mode.
Keywords: silicon-on-insulator field-effect Hall sensor, Sentaurus TCAD, doping concentration, drain
The field-effect Hall sensor (FEHS) based on the
silicon-on-insulator (SOI) structure outperforms the
classical Hall sensor in the following criteria [1, 2]:
possible usage as a high-temperature (up to 300°С)
magnetic field transducer; high radiation stability due
to the SOI technology; the significant increase in the
threshold magnetic sensitivity, expanding the dynamic
magnetic sensitivity range; operation under a low
drain current (–0.1–0.4 mA in the case of the com-
pletely open channel); possible control by direct cur-
rent; no switches, and therefore no switching noise;
and possible implementation of the maximum thresh-
old sensitivity by increasing the signal/noise ratio.
The field-effect Hall sensors are manufactured and
well-studied. However, further optimization of their
parameters is not possible without numerical model-
ing using modern technological simulation packages.
For the computer-aided analysis of the sensor, this
paper applies Sentaurus TCAD  developed by Syn-
opsys. The FEHS presented in  is manufactured
using the SOI technology. Figure 1 demonstrates the
topology and cross section of the SOI FEHS.
As established empirically, a major parameter of
the FEHS, the Hall field Е
, is defined by the current
density J, the magnetic induction В, and the quantity
R reflecting the sample properties :
The current density J is proportional to the current
that flows through the active layer of the sensor, i.e.,
the drain current of the SOI FEHS. Thus, the influ-
ence exerted by the doping concentration in the active
layer and in the substrate on this parameter is of defi-
nite scientific and practical interest.
The FEHS has a cross-shaped topology (see
Fig. 1a). Therefore, calculation of the electrical CVC
induced by charge carrier distribution inside or out-
side a magnetic field (including Hall emf emergence in
the magnetic field) is possible only via the mathemat-
ical simulation of the three-dimensional structure.
However, the posed problems can be solved using two-
dimensional simulation results.
At the initial stage of numerical calculation, the
mathematical model is corrected by comparing the
transfer current-voltage characteristics  of the cal-
culation and the SOI FEHS sample measured experi-
mentally in Sentaurus TCAD. A two-dimensional
mathematical model is created using a cross-section of
the FEHS (see Fig. 1b). The substrate is manufactured
from silicon doped by a donor impurity with the con-
stant phosphorus doping concentration N
The substrate has thickness is 250 μm (layer 9). The
σσRR R== =−E[BJ][BE] [EB]