Majority-Carrier Lifetime in the Potential Barrier of an MIS Capacitor under Monopolar Conditions

Majority-Carrier Lifetime in the Potential Barrier of an MIS Capacitor under Monopolar Conditions A theoretical study is reported of the lifetime–potential relationship for nonequilibrium, photogenerated carriers in the space-charge region of a semiconductor. The problem is addressed in the context of an MIS capacitor operated under monopolar conditions, the semiconductor being doped with deep-level acceptor impurity and partly compensated with shallow-level donor impurity. The temperature is taken to be so low that impurity atoms are weakly ionized. The magnitude and depth profile of carrier lifetime in the potential barrier are examined as functions of constant capacitor voltage. The major findings are the following: (i) The lifetime is voltage-selective in that the lifetime–surface-potential characteristic exhibits a relatively sharp peak when the capacitor is operated near the flat-band condition. (ii) The lifetime is maximal when the surface potential is negative (forward bias), the maximum lifetime being independent of the compensating-impurity concentration. (iii) With fixed impurity concentrations, the point of maximum lifetime moves away from the surface as the surface potential increases in absolute value. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Majority-Carrier Lifetime in the Potential Barrier of an MIS Capacitor under Monopolar Conditions

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Publisher
Springer Journals
Copyright
Copyright © 2004 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/B:RUMI.0000026172.68770.f8
Publisher site
See Article on Publisher Site

Abstract

A theoretical study is reported of the lifetime–potential relationship for nonequilibrium, photogenerated carriers in the space-charge region of a semiconductor. The problem is addressed in the context of an MIS capacitor operated under monopolar conditions, the semiconductor being doped with deep-level acceptor impurity and partly compensated with shallow-level donor impurity. The temperature is taken to be so low that impurity atoms are weakly ionized. The magnitude and depth profile of carrier lifetime in the potential barrier are examined as functions of constant capacitor voltage. The major findings are the following: (i) The lifetime is voltage-selective in that the lifetime–surface-potential characteristic exhibits a relatively sharp peak when the capacitor is operated near the flat-band condition. (ii) The lifetime is maximal when the surface potential is negative (forward bias), the maximum lifetime being independent of the compensating-impurity concentration. (iii) With fixed impurity concentrations, the point of maximum lifetime moves away from the surface as the surface potential increases in absolute value.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 18, 2004

References

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