A theoretical study is reported of the lifetime–potential relationship for nonequilibrium, photogenerated carriers in the space-charge region of a semiconductor. The problem is addressed in the context of an MIS capacitor operated under monopolar conditions, the semiconductor being doped with deep-level acceptor impurity and partly compensated with shallow-level donor impurity. The temperature is taken to be so low that impurity atoms are weakly ionized. The magnitude and depth profile of carrier lifetime in the potential barrier are examined as functions of constant capacitor voltage. The major findings are the following: (i) The lifetime is voltage-selective in that the lifetime–surface-potential characteristic exhibits a relatively sharp peak when the capacitor is operated near the flat-band condition. (ii) The lifetime is maximal when the surface potential is negative (forward bias), the maximum lifetime being independent of the compensating-impurity concentration. (iii) With fixed impurity concentrations, the point of maximum lifetime moves away from the surface as the surface potential increases in absolute value.
Russian Microelectronics – Springer Journals
Published: Oct 18, 2004
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