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Magnetoresistance of multilayered structures obtained by the magnetron method

Magnetoresistance of multilayered structures obtained by the magnetron method Magnetoresistance of the FeNi/Cu/Co spin-gate structures and multilayered Co/Cu/Co structures is investigated. By the example of spin-gate structures with spontaneously induced magnetic anisotropy, the curves of anisotropic and giant magnetoresistance (AMR and GMR) are compared in four geometry configurations: mutual orientations of the current, magnetic field, and easy magnetization axis. Both in the first case and in the case of the multilayered Co/Cu/Co structures deposited in the external magnetic field, the GMR effect substantially depends on the geometry configuration of its measurement. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Magnetoresistance of multilayered structures obtained by the magnetron method

Russian Microelectronics , Volume 38 (5) – Sep 19, 2009

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References (6)

Publisher
Springer Journals
Copyright
Copyright © 2009 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739709050060
Publisher site
See Article on Publisher Site

Abstract

Magnetoresistance of the FeNi/Cu/Co spin-gate structures and multilayered Co/Cu/Co structures is investigated. By the example of spin-gate structures with spontaneously induced magnetic anisotropy, the curves of anisotropic and giant magnetoresistance (AMR and GMR) are compared in four geometry configurations: mutual orientations of the current, magnetic field, and easy magnetization axis. Both in the first case and in the case of the multilayered Co/Cu/Co structures deposited in the external magnetic field, the GMR effect substantially depends on the geometry configuration of its measurement.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 19, 2009

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