Magnetoresistance of the FeNi/Cu/Co spin-gate structures and multilayered Co/Cu/Co structures is investigated. By the example of spin-gate structures with spontaneously induced magnetic anisotropy, the curves of anisotropic and giant magnetoresistance (AMR and GMR) are compared in four geometry configurations: mutual orientations of the current, magnetic field, and easy magnetization axis. Both in the first case and in the case of the multilayered Co/Cu/Co structures deposited in the external magnetic field, the GMR effect substantially depends on the geometry configuration of its measurement.
Russian Microelectronics – Springer Journals
Published: Sep 19, 2009
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