An experimentally discovered negative sensitivity effect related to the occurrence of the bulk magnetoconcentration effect on the well-substrate pn junction of a dual-collector lateral bipolar npn magnetotransistor with a diffused well serving as a base was studied by design and process simulation. It was established that the sign of sensitivity is determined by dividing electron and hole streams on the well-substrate pn junction in a magnetic field. Magnetic-field modulation of conductivity in the region of a bulk charge of the pn junction is analyzed.
Russian Microelectronics – Springer Journals
Published: Sep 24, 2010
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