Magnetic nanostructures and nanodevices with a semiconductor or dielectric spacer

Magnetic nanostructures and nanodevices with a semiconductor or dielectric spacer Magnetic properties of nanoscale magnetic-layer systems using FeNi, Co, FeMn, Al2O3, and SiC layers are studied experimentally. The dependence of magnetic behavior on the system geometry and parameters is addressed. Ferromagnet-semiconductor exchange coupling subject to the amplitude of an applied magnetic field is revealed. It is found that the magnetic behavior of the nanostructures varies in a nonlinear manner with applied magnetic field. Spin-tunneling magnetoresistance is observed in magnetic-layer junctions containing an Al2O3 spacer. In-plane-conduction magnetic-field sensors using an Al2O3 or a SiC spacer are fabricated and tested. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Magnetic nanostructures and nanodevices with a semiconductor or dielectric spacer

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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0007-6
Publisher site
See Article on Publisher Site

Abstract

Magnetic properties of nanoscale magnetic-layer systems using FeNi, Co, FeMn, Al2O3, and SiC layers are studied experimentally. The dependence of magnetic behavior on the system geometry and parameters is addressed. Ferromagnet-semiconductor exchange coupling subject to the amplitude of an applied magnetic field is revealed. It is found that the magnetic behavior of the nanostructures varies in a nonlinear manner with applied magnetic field. Spin-tunneling magnetoresistance is observed in magnetic-layer junctions containing an Al2O3 spacer. In-plane-conduction magnetic-field sensors using an Al2O3 or a SiC spacer are fabricated and tested.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 19, 2005

References

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