Magnetic properties of nanoscale magnetic-layer systems using FeNi, Co, FeMn, Al2O3, and SiC layers are studied experimentally. The dependence of magnetic behavior on the system geometry and parameters is addressed. Ferromagnet-semiconductor exchange coupling subject to the amplitude of an applied magnetic field is revealed. It is found that the magnetic behavior of the nanostructures varies in a nonlinear manner with applied magnetic field. Spin-tunneling magnetoresistance is observed in magnetic-layer junctions containing an Al2O3 spacer. In-plane-conduction magnetic-field sensors using an Al2O3 or a SiC spacer are fabricated and tested.
Russian Microelectronics – Springer Journals
Published: Feb 19, 2005
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