For the first time, an investigation is carried out into the mid-temperature chemical vapor deposition of phosphosilicate-and borophosphosilicate-glass (BPSG) films from the tetraethylorthosilicate-dimethylphosphite-triethylborate (trimethylborate) system, as well as a characterization of the films themselves. The processes are effected in a Karat low-pressure reactor provided with a specifically designed feeder for each liquid reagent, operating by bubbling evaporation. It is shown that using dimethylphosphite allows the phosphorus concentration in films to be controlled over a wide range. Optimum ranges are identified for the B and P concentrations in films—CB and CP—from the viewpoint of thermal-flow planarization and structural stability of films in storage. Specifically, the concentrations should be such that CB + CP = 8.7 ± 0.3 wt % and CP = 3.0 to 3.8 wt %. It is established that with the reactant system employed there is no depletion of phosphorus in films along the deposition zone, and CB + CP is almost uniform. Under the stated conditions, BPSG deposition proceeds at a rate of 9.0–10.0 nm/min, and individual films thus obtained are highly uniform in thickness and have a density of 2.3 g/cm3. They show a mirror-like surface to indicate a very low degree of surface roughness. They are less reactive with moisture.
Russian Microelectronics – Springer Journals
Published: Jul 24, 2007
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