Low-temperature pulsed vapor-phase deposition of thin ruthenium metal layers for microelectronics and nanoelectronics. Part 4: The structure and basic properties of ruthenium layers

Low-temperature pulsed vapor-phase deposition of thin ruthenium metal layers for microelectronics... The data on the properties of ruthenium layers produced in the temperature range of 110–350°C by pulsed deposition from the vapor phase with participation of the complex carbonyl-diene precursor Ru(CO3)(C6H8) and of NH3, N2O, and H2 as the second reagent and thermally annealed in the conditions of steady-state and pulsed annealing are summarized. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Low-temperature pulsed vapor-phase deposition of thin ruthenium metal layers for microelectronics and nanoelectronics. Part 4: The structure and basic properties of ruthenium layers

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971104010X
Publisher site
See Article on Publisher Site

Abstract

The data on the properties of ruthenium layers produced in the temperature range of 110–350°C by pulsed deposition from the vapor phase with participation of the complex carbonyl-diene precursor Ru(CO3)(C6H8) and of NH3, N2O, and H2 as the second reagent and thermally annealed in the conditions of steady-state and pulsed annealing are summarized.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 14, 2011

References

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