The data on the peculiarities of nucleation and initial stages of the growth of ruthenium layers on different surfaces in the temperature range 110–350°C under the pulsed deposition from the vapor phase with the participation of the carbonyl-diene precursor Ru(CO)3C6H8, as well as NH3, N2O, and H2 as the second reagent are generalized.
Russian Microelectronics – Springer Journals
Published: Jul 21, 2010
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