Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors

Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors An experimental evaluation is presented concerning the common-emitter parameters and output current–voltage characteristics of chip n–p–n transistors that are designed for pulsed conditions and have gain–bandwidth products, f T, higher than 300 MHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. It is shown that the new approach enables one to improve transistor performance. Some process techniques for the transistors are described. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1016391230982
Publisher site
See Article on Publisher Site

Abstract

An experimental evaluation is presented concerning the common-emitter parameters and output current–voltage characteristics of chip n–p–n transistors that are designed for pulsed conditions and have gain–bandwidth products, f T, higher than 300 MHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. It is shown that the new approach enables one to improve transistor performance. Some process techniques for the transistors are described.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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