An experimental evaluation is presented concerning the common-emitter parameters and output current–voltage characteristics of chip n–p–n transistors that are designed for pulsed conditions and have gain–bandwidth products, f T, higher than 300 MHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. It is shown that the new approach enables one to improve transistor performance. Some process techniques for the transistors are described.
Russian Microelectronics – Springer Journals
Published: Oct 13, 2004
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