Laser Source Influence on the Preferential Growth and the Inversion Degree in Pulsed Laser CoFe2O4 Films

Laser Source Influence on the Preferential Growth and the Inversion Degree in Pulsed Laser... A comparative study between cobalt ferrite films deposited by pulsed laser deposition as a function of the laser sources, 355 nm (Nd:YAG) and 248 nm (KrF excimer), on amorphous quartz (AQ) and < 100 > -oriented silicon wafer (SW) at different temperatures (650–800 C) is presented. Also, a quantitative estimation of the preferential crystalline growth orientation as laser source function was made by means of Lotgering factor and Harris texture coefficient, which were obtained from XRD patterns. The inversion degree in spinel-type structure for cobalt ferrite films was calculated through a deconvolution in Raman spectra, where the band A vibrating modes in tetrahedral sites were associated with Fe and Co sites (687 and 1g −1 611 cm , respectively). Additionally, saturation magnetization was also calculated from the inversion degree obtained from deconvolution of the Raman spectra in CoFe O films, being compared with experimental results, which is in a good 2 4 agreement with cobalt ferrite bulk, and we also correlated the preferential growth and the particle size with increment of the coercive field. Keywords CoFe O films · Raman spectroscopy · Spinel inversion degree 2 4 insulating semiconductor electronic property and the high 1 Introduction Curie temperature allow http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Superconductivity and Novel Magnetism Springer Journals

Laser Source Influence on the Preferential Growth and the Inversion Degree in Pulsed Laser CoFe2O4 Films

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Publisher
Springer Journals
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Physics; Strongly Correlated Systems, Superconductivity; Magnetism, Magnetic Materials; Condensed Matter Physics; Characterization and Evaluation of Materials
ISSN
1557-1939
eISSN
1557-1947
D.O.I.
10.1007/s10948-018-4740-6
Publisher site
See Article on Publisher Site

Abstract

A comparative study between cobalt ferrite films deposited by pulsed laser deposition as a function of the laser sources, 355 nm (Nd:YAG) and 248 nm (KrF excimer), on amorphous quartz (AQ) and < 100 > -oriented silicon wafer (SW) at different temperatures (650–800 C) is presented. Also, a quantitative estimation of the preferential crystalline growth orientation as laser source function was made by means of Lotgering factor and Harris texture coefficient, which were obtained from XRD patterns. The inversion degree in spinel-type structure for cobalt ferrite films was calculated through a deconvolution in Raman spectra, where the band A vibrating modes in tetrahedral sites were associated with Fe and Co sites (687 and 1g −1 611 cm , respectively). Additionally, saturation magnetization was also calculated from the inversion degree obtained from deconvolution of the Raman spectra in CoFe O films, being compared with experimental results, which is in a good 2 4 agreement with cobalt ferrite bulk, and we also correlated the preferential growth and the particle size with increment of the coercive field. Keywords CoFe O films · Raman spectroscopy · Spinel inversion degree 2 4 insulating semiconductor electronic property and the high 1 Introduction Curie temperature allow

Journal

Journal of Superconductivity and Novel MagnetismSpringer Journals

Published: May 28, 2018

References

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