Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level... Experimental results are reported concerning the variation of the linear absorption coefficient with doping level and temperature in silicon subjected to 1.06-µm laser irradiation. They should be useful for accurate evaluation of equivalent dose rates in laser simulations of ionizing-radiation effects on different types of IC. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Laser simulation of ionizing-radiation effects on silicon ICs: The temperature and doping-level dependence of simulation parameters

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Publisher
Springer Journals
Copyright
Copyright © 2005 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-006-0007-1
Publisher site
See Article on Publisher Site

Abstract

Experimental results are reported concerning the variation of the linear absorption coefficient with doping level and temperature in silicon subjected to 1.06-µm laser irradiation. They should be useful for accurate evaluation of equivalent dose rates in laser simulations of ionizing-radiation effects on different types of IC.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 21, 2006

References

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