Experimental results are reported concerning the variation of the linear absorption coefficient with doping level and temperature in silicon subjected to 1.06-µm laser irradiation. They should be useful for accurate evaluation of equivalent dose rates in laser simulations of ionizing-radiation effects on different types of IC.
Russian Microelectronics – Springer Journals
Published: Nov 21, 2006
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud