Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide

Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide

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Publisher
Springer Journals
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716040089
Publisher site
See Article on Publisher Site

Abstract

Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 16, 2016

References

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