Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2

Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge... A study of kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CCl2F2 is carried out. It is confirmed that the main chemically active particles providing the etching of GaAs are the chlorine atoms. It is shown that the character of kinetic curves and the form of dependences of the etching rate on gas pressure is determined by the energy of ions that bombard the surface. It is established that there is a satisfactory correlation between changes of the rate of decrease of the sample mass and the concentration of etching products in the discharge gas phase in the etching process in the stationary mode. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714060031
Publisher site
See Article on Publisher Site

Abstract

A study of kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CCl2F2 is carried out. It is confirmed that the main chemically active particles providing the etching of GaAs are the chlorine atoms. It is shown that the character of kinetic curves and the form of dependences of the etching rate on gas pressure is determined by the energy of ions that bombard the surface. It is established that there is a satisfactory correlation between changes of the rate of decrease of the sample mass and the concentration of etching products in the discharge gas phase in the etching process in the stationary mode.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 12, 2014

References

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