Isotropic Plasma Etching of SiO2 Films

Isotropic Plasma Etching of SiO2 Films The isotropic etching of SiO2 with an SF6–O2 plasma is studied experimentally. It is shown that the key factors in the process are the total and partial pressures of SF6 and O2 and the RF power. A smoothed-down edge profile of contact windows is obtained if SF6 and O2 are mixed in a ratio of 1 : 10 to 1 : 5. The maximum etch rate is achieved at total pressures of 250 to 450 Pa. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Isotropic Plasma Etching of SiO2 Films

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2002 by MAIK "Nauka/Interperiodica"
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1020234924542
Publisher site
See Article on Publisher Site

Abstract

The isotropic etching of SiO2 with an SF6–O2 plasma is studied experimentally. It is shown that the key factors in the process are the total and partial pressures of SF6 and O2 and the RF power. A smoothed-down edge profile of contact windows is obtained if SF6 and O2 are mixed in a ratio of 1 : 10 to 1 : 5. The maximum etch rate is achieved at total pressures of 250 to 450 Pa.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 13, 2004

References

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