Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon 28, 29, and 30 with high isotopic enrichment

Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon... The results of studying the IR absorption spectra of shallow donors and acceptors in high-purity stable 28Si(99.99%), 29Si(99.92%), and 30Si(99.97%) isotope single crystals grown by the method of float zone melting were reported. The content of residual boron, phosphorus, and arsenic impurities in the studied single crystals was determined with a detection limit of 1 × 1012, 4 × 1011, and 1 × 1012 at./cm3, respectively. The results of the IR spectroscopic estimation of the content of shallow donors and acceptors were in good agreement with the data obtained from the Hall effect measurements for the concentration of free charge carriers. The parameters of the absorption lines of boron and phosphorus impurities in the single crystal of silicon isotopes were studied. The change in the isotope composition of silicon was shown to lead to the shift of the energy spectrum of shallow impurity sites towards higher energies with an increase in the atomic weight of an isotope. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon 28, 29, and 30 with high isotopic enrichment

Loading next page...
 
/lp/springer_journal/isotopic-effects-in-the-infrared-absorption-spectra-of-electrically-C7h2YORq3z
Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713080076
Publisher site
See Article on Publisher Site

Abstract

The results of studying the IR absorption spectra of shallow donors and acceptors in high-purity stable 28Si(99.99%), 29Si(99.92%), and 30Si(99.97%) isotope single crystals grown by the method of float zone melting were reported. The content of residual boron, phosphorus, and arsenic impurities in the studied single crystals was determined with a detection limit of 1 × 1012, 4 × 1011, and 1 × 1012 at./cm3, respectively. The results of the IR spectroscopic estimation of the content of shallow donors and acceptors were in good agreement with the data obtained from the Hall effect measurements for the concentration of free charge carriers. The parameters of the absorption lines of boron and phosphorus impurities in the single crystal of silicon isotopes were studied. The change in the isotope composition of silicon was shown to lead to the shift of the energy spectrum of shallow impurity sites towards higher energies with an increase in the atomic weight of an isotope.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2013

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from
Google Scholar,
PubMed
Create lists to
organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off