The results of studying the IR absorption spectra of shallow donors and acceptors in high-purity stable 28Si(99.99%), 29Si(99.92%), and 30Si(99.97%) isotope single crystals grown by the method of float zone melting were reported. The content of residual boron, phosphorus, and arsenic impurities in the studied single crystals was determined with a detection limit of 1 × 1012, 4 × 1011, and 1 × 1012 at./cm3, respectively. The results of the IR spectroscopic estimation of the content of shallow donors and acceptors were in good agreement with the data obtained from the Hall effect measurements for the concentration of free charge carriers. The parameters of the absorption lines of boron and phosphorus impurities in the single crystal of silicon isotopes were studied. The change in the isotope composition of silicon was shown to lead to the shift of the energy spectrum of shallow impurity sites towards higher energies with an increase in the atomic weight of an isotope.
Russian Microelectronics – Springer Journals
Published: Nov 14, 2013
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